Abstract
Reactive deposition epitaxy is used for the growth of semiconducting β-FeSi 2 particles on Si(0 0 1) substrate. Iron layers of thickness 6 nm were deposited on Si substrates at 600 °C, followed by in situ annealing at 600 °C for 10, 20 and 30 min. The coexistence of the equilibrium α-FeSi 2, β-FeSi 2 phases and the metastable γ-FeSi 2 phase is revealed through transmission electron microscopy (TEM) analysis, whereas the evolution of the semiconducting β-FeSi 2 phase with annealing time is investigated with infrared transmittance measurements.
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