Abstract
CVD TiN films offer promise as a barrier to Al deposition as a result of the improved conformai step coverage of this film in 0.25 μm contact holes. As an underlayer, the TiN performs a secondary role by improving electromigration (EM) resistance. This is a result of the crystal orientation of the TiN film and its influence on the orientation of the subsequent Al layer. A <111>Al orientation shows improved EM resistance; however, CVD TiN has a preferred <200> orientation as opposed to a <111>PVD TiN orientation.In this study, two parts were investigated: 1) obtain a qualified PVD Al film on a CVD <200> TiN barrier in terms of sheet resistance and reflectivity utilizing MRC's Eclipse™ Mark II PVD system; 2) examine the texture of the Al film utilizing Philips XL30 SEM equipped with EDAX-DX4 EDS system and Electron Back Scatter Pattern (EBSP) system.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
