Abstract
CVD TiN using TiCl/sub 4/ and NH/sub 3/ chemistry has been implemented successfully in cylindrically shaped Ta/sub 2/O/sub 5/ storage capacitor as a barrier layer in poly-Si/TiN double upper electrode. Electrical characteristics of Ta/sub 2/O/sub 3/ capacitor with CVD TiN double electrode were superior to that with PVD TiN and it was attributed to nearly 100% conformality of CVD TiN. However, it was also found that minimizing chlorine content in CVD TiN film was essential to achieve low leakage current level, and in-situ post annealing of CVD TiN film in NH/sub 3/ ambient was effective in reducing chlorine content.
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