Abstract
A new technique for low temperature CVD TiN is introduced as a barrier/glue layer for sub 0.5 micron applications. Excellent conformity (> 70%) is achieved while maintaining good electrical performance and reliability. The films are shown to be polycrystalline TiN with no preferred grain orientation. In addition compositional analysis shows significant amounts of carbon in the film presumably between the grains. The electrical properties of the CVD film were evaluated at the via and contact level. The contact and via resistances of tungsten plugs using CVD TiN glue layers are shown to be comparable to plugs using sputtered TiN. The barrier performance of the film was also evaluated at the contact level. The superior junction leakage data indicate that the CVD TiN film should have wide application as a barrier metal for sub 0.5 mm applications.
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