Abstract
The interface of ZnTe/Si(211) grown by molecular beam epitaxy was investigated by high-resolution transmission electron microscopy. Several types of defects such as misfit dislocations, stacking faults, agglomerations of vacancies, and precipitates were observed and studied by electron microscopy at the ZnTe/Si interface. The distribution of misfit dislocations at the interface was revealed with the assistance of the fast Fourier transformation filtering technique. A stick-and-ball interface model including misfit dislocation geometry is proposed. The possible origins of the stacking faults, vacancies, and precipitates are discussed.
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