Distribution of Misfit Dislocations at the InGaAs/GaAs(001) Interface Observed by Monochromatic X-Ray Topography

Abstract

Anisotropies in misfit dislocations (MDs) at the interface of InGaAs/GaAs (001) are investigated by monochromatic X-ray topography (XRT) technique. Single MD line or several MD lines (MD bunching) are observed as white lines in XRT. Distribution, density, and number of MDs in one MD bunching are evaluated. The density of α-MDs is larger than that of β-MDs. Number of MDs in one MD bunching distribute with two peaks in both in-plane directions. In macroscopic view, α-MD bunching lay more orderly than the other. While in microscopic view, α-MDs gather for the range narrower than β-MDs.