Abstract
Nonpolar epitaxial lateral overgrown (ELOG) GaN ridges with different in-plane orientations were studied using cathodoluminescence (CL) and micro-Raman spectroscopy. The high density of threading dislocations (TD) and basal plane stacking faults (BSF) in a-plane GaN on r-plane sapphire requires a defect reduction, e.g. via ELOG, in order to realize efficient emission from light emitting diodes (LEDs) or lasers. The distribution of TDs and BSFs is derived from plan view and cross sectional spectrally resolved CL micrographs. For [0001] stripe orientations BSFs and TDs spread into the laterally overgrown material (wing). In [\(0\bar{1}11\)] oriented stripes TDs are mostly restricted to the region on top of the mask opening (window), whereas BSFs extend into the wing region. A reduction of BSF and TDs in the wing region was observed for [\(01\bar{1}0\)] oriented stripes. Cross sectional Raman mapping of an [\(01\bar{1}0\)] oriented GaN ridge shows reduced strain and improved crystalline quality in the wing regions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
