Abstract
We investigated the structural and optical characteristics of nonpolar a-plane (11-20) GaN structure grown on TiO 2 nanoparticles (NP)-coated r-plane sapphire by spin coating method. The surface morphology without any observable inverse pyramidal pits was observed by atomic force microscopy (AFM) measurement. Transmission electron microscopy (TEM) analysis revealed that the threading dislocations (TDs) and basal plane stacking faults (BSFs) densities were around 4.5 × 10 9 cm -2 and 3.1 × 10 5 cm -1 , respectively. It was also found that the broadening of x-ray rocking curves (XRC) full width at a half maximum (FWHM) in Si-doped a-plane GaN on the TiO 2 NP-coated r-plane sapphire was affected by the tilt and twist of mosaic crystals. The photoluminescence (PL) intensity of TiO 2 NP-related MQWs sample at 295 K was approximately 18 % higher than that of the reference sample. This implied that the improved PL intensity was attributed to scattering of light by TiO 2 NP and InGaN/GaN MQWs interface of high quality.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
