Abstract
The early stages of ion-beam-assisted growth of germanium films on SiO 2 in ultrahigh vacuum is described. Island evolution in the early stages of film growth was studied using post-growth transmission electron microscopy. This study showed that, with increasing energy, in the ion energy range 150–350 eV, the germanium island size distribution became more uniform, the mean island size decreased while the island density increased. In addition, for a fixed ion energy, an increased ion-to atom flux ratio resulted in similar changes in microstructure distribution as were observed with increasing ion energy. A new model is qualitatively developed to explain the observed phenomenon in terms of ion-bombardment-induced adatom desorption from supercritical-sized clusters.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
