Abstract
ABSTRACTSurface and cross-section relief evolution of ferroelectric epitaxial (Ba,Sr)TiO3 films rf-sputtered on (001) HgO crystal cle-avage surface versus the oxygen worKing gas pressure P and subst-rate temperature T were studied. Specific features of both three-dimensional and two-dimensional epitaxy mechanisms corresponding to various deposition conditions were revealed. Difference between low and high P-T-value 3D epitaxy was established. The deposition of films with mirror-smooth surfaces and perfect interfaces is shown to be possible.
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