Abstract
AbstractTi3SiC2 samples were irradiated by a 6‐MeV Si+ ion to a fluence of 2 1016 Si+ ions/cm2 at 300°C followed by annealing at 900°C for 5 h. A transmission electron microscope was used to characterize microstructural evolution. The phase of Ti3SiC2 transformed from the hexagonal close‐packed (HCP) to a face‐centered cubic structure after irradiation. Hexagonal screw dislocation networks were identified at the deepest position of the irradiated area, which are the products of dislocations reactions. After annealing, the irradiated region has reverted to the original HCP structure. High‐density cavities and stacking faults were formed along the basal planes. In addition, ripplocations have been observed in the irradiated region in the Ti3SiC2 sample after annealing. Our insights into the formation processes and corresponding mechanisms of these defect structures might be helpful in the material design of advanced irradiation tolerance materials.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
