Abstract

Owing to the superior quality of the interface, WC/SiC multilayers have been considered promising candidates for X-ray Laue lenses in nano-focusing facilities and supermirrors in X-ray telescopes. To investigate the microstructure evolution in WC/SiC multilayers, a set of periodic multilayers was prepared with varied WC layer thicknesses ranging from 1.0 nm to 10.0 nm while keeping the thickness of the SiC layer constant at 3.0 nm. These samples were characterized using various analytical techniques, including GIXR, AFM, and XRD. An aperiodic WC/SiC multilayer sample was analyzed by TEM, EDX, and SAED to further study the chemical and structural changes while the thickness of the WC layer increased. The results indicate that the WC layer of the WC/SiC multilayer changes from amorphous to crystalline with increasing layer thickness. The crystalline state of the WC layer changes as the thickness increases. Meanwhile, the carbon atoms migrates noticeably to the interface as the WC layer becomes thicker, which smoothens the interfacial defects caused by the crystalline state transition. This migration of carbon is one of the key factors contributing to the smooth interface in WC/SiC multilayers.

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