Abstract
ABSTRACTLead zirconate titanate ferroelectric thin films have been fabricated and fully integrated with standard CMOS semiconductor technology to produce non-volatile IC memory devices, now being tested in the marketplace. Starting with an organo-metallic sol-gel and using standard IC spin-on glass and annealing technologies, perovskite type ferroelectric thin films are formed. A variety of techniques have been under study for characterizing the crystalline microstructumre of the ferroelectric layer. Presented here are observations made with optical and scanning electron microscopy, and X-ray diffraction analysis of the effects of ferroelectric composition and sinter temperatures on crystal structure.
Published Version
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