Abstract
The microstructures of epitaxial SnO 2 (rutile) thin films deposited by atomic layer deposition on α-Al 2O 3 (0 1 2) substrates at 600°C using either SnCl 4 or SnI 4 as tin precursor have been investigated by X-ray diffraction and transmission electron microscopy. It is shown that the film/substrate interface is flat without any visible additional phase, while the film structure and surface morphology depend on the metal precursor. Typical of the SnCl 4-process films is a rough surface and a high density of defects, including (0 1 1) and (1 0 1) twins and anti-phase boundaries (APBs). In contrast, the SnI 4-process films with their uniform thickness, flat surface and low density of APBs approach the perfect single crystal. Irrespective of the processing, all films have (1 0 1) texture, parallel to the substrate surface, with the epitaxial relationships [0 1 0] SnO 2 ∥ [1 0 0] α-Al 2 O 3 and [1 0 1 ̄ ] SnO 2 ∥[ 1 ̄ 2 ̄ 1] α-Al 2 O 3 .
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