Abstract
An ultrasonic mist pyrolysis system has been used to deposit in situ thick films of YBa 2Cu 3O 7− x , on single crystal LaAlO 3. Growth temperatures of ∼900°C have been utilised to spray nitrate precursors at rates varying between 0.7 and 1 μm min −1. Epitaxial growth of biaxially aligned (<3°), 3 μm thick, films has been achieved, with typical T c endpoint∼85 K and T c onset∼91 K, with J cs of >10 4 A cm −2 1 T, 77 K. The film microstructure is very dense and grain connectivity is good. The main objective of this research has been to obtain high T c values and to further investigate the limitations of this very scalable route for conductor fabrication by studying film properties in relation to nitrate concentration and growth rate.
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