Abstract
Abstract In this study, Si3N4 nanowires were prepared by one-step method in Si3N4 foam ceramics. This was accomplished via simple and safe pre-embedded powder treatment combined with reaction sintering method. Nitriding temperature and time were determined to have influence on the production of nanowires. Under used sintering conditions with nitriding at 1400 °C for 4–6 h or at 1450 °C for 2–6 h, densely distributed nanowires were obtained in the sample, and the formed nanowires were either straight or bent. The straight nanowires were completely crystalline, while the bent nanowires had staggered crystalline-amorphous distribution at the bending position. Nanowires in the sample did not substantially affect open porosity and density of the sample. However, the analysis of typical samples with or without dense nanowires revealed that the existence of densely distributed nanowires reduced median pore diameter of windows on the pore walls from 60.7 μm to 21.4 μm and increased BET specific surface area of the sample by 46.7%. In addition, the presence of densely distributed nanowires in pores enhanced compressive strength of the sample by at least 10%.
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