Abstract
High-k ZrO2 films were prepared by nitrogen-assisted direct current reactive magnetron sputtering onn-type silicon (100). The microstructure and optical properties in relation to thermalbudgets were investigated. X-ray photoelectron spectroscopy (XPS) was used to determinethe chemical states. Atomic force microscopy (AFM) analysis indicated that the annealingtemperature had significant effects on surface roughness. By using Fourier transforminfrared spectroscopy (FTIR), the resistance to the interface growth after the additionalthermal budgets was observed. The thickness and pseudodielectric constants ofZrO2 thin films correlating to annealing temperature were determined by Tauc–Lorentzspectroscopic ellipsometry (SE) dispersion model fitting. Optical band gaps(Eg) were also obtained based on the extracted absorption edge.
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