Abstract
Gadolinium oxide (Gd2O3) thin films were deposited on Si (100) and quartz substrates at different substrate temperatures (300–873K) and oxygen partial pressures (0.002–2Pa) by pulsed laser deposition technique. The microstructure of the films was analyzed by X-ray diffraction (XRD), atomic force microscopy and Raman spectroscopy. The XRD pattern shows the presence of monoclinic phase of Gd2O3 as a major phase along with a small volume fraction of cubic phase at lower substrate temperatures. Optical transmittance and absorbance of the Gd2O3 films were measured by UV–visible spectrophotometer. The films deposited at different deposition conditions show a strong absorbance at ~220nm and exhibit transmittance in the range of 70–90%. Highest value of band gap (~5.80eV) is obtained for the Gd2O3 film deposited at 873K.
Published Version
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