Abstract
Composite thin films consisting of ferroelectric LiNbO3 (LN) and ZnO semiconductor layers were grown on Pt/TiO2/SiO2/Si substrates and characterized. The films were single c-axis orientation and had well-defined interfaces without any evidence of interfacial interaction and diffusion. Due to the ferroelectric polarization of LN, counterclockwise capacitance–voltage memory windows were observed clearly. The memory window increased with applied voltage and no obvious charge injection happened. At ±8V, a large memory window of ∼3.3V was exhibited. The present results suggest that LN ferroelectric films combined with ZnO semiconductor would hold promise for high-performance nonvolatile memory devices.
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