Abstract
Using an improved Bridgman technique with high temperature gradient (210K/cm), directionally solidified Si–TaSi2 eutectic in situ composite with uniform and aligned TaSi2 fiber is obtained. The growth mechanism and field emission property of the Si–TaSi2 eutectic are investigated. It is revealed that the co-operative growth of two phases for Si–TaSi2 eutectic is related to the ratio of ΔSsi/ΔSTaSi2 (ΔS is the entropy of fusion). The novel TaSi2 sharp tip arrays with fiber curvature radius of 21nm and fiber height of 2.79–6.45µm are fabricated by selective wet etching at optimized parameters. The Si–TaSi2 cathode arrays obtained present a reasonable field emission performance with low turn-on electric field of 3.8V/μm and threshold field of 6.5V/μm and large emission area per tip of about 1874nm2, which can be used as promising materials for field emitters.
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