Abstract
The holmium-doped 200-nm-thick BaTiO3 (BT) thin films were prepared by rf magnetron sputtering. The effects of postannealing temperature and dopant concentration on microstructure and electrical properties were studied. Compositions of thin films studied are BT1 (Ba∕Ti=0.8543), BT (Ba∕Ti=0.9681), BT–0.05Ho, BT–1.1Ho, and BT–1.8Ho, and BT–2.9Ho where Ho content is in at %. For all films studied, the dielectric constant increases with increasing annealing temperature up to 700 °C due to better crystallinity and large grain sizes. The BT1 film annealed at 700 °C shows a high dielectric constant of 287 measured at 100 kHz and the Ho-doped film exhibited a dielectric constant of 135 for BT–1.1Ho annealed at 700 °C. A significant role of the Ho on the reduction of leakage current density is observed for the 700 °C annealed samples because of the smooth surface roughness. The BT–2.9Ho film shows the low leakage current density of 1.27×10−8A∕cm2 at an electric field of 100kV∕cm.
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