Abstract

Barium Titanate (BaTiO3) bulk was synthesized by co-precipitation method. Samples were sintered with different temperature (900°C and 1100 °C) and holding time 3 and 5 hours. The effect of temperature and holding time of sintering process on microstructure and dielectric properties of Barium titanate bulk was investigated by characterization using X-ray diffraction (XRD), Scanning Electron Microscope (SEM), Resistance Capacitance Inductance (RCL meter) and Sawyer tower method. The XRD data of BaTiO3 sintered at 1100°C/5h show the perfect single phase of perovskite structure of BaTiO3. It has highest crystallinity 21.9% and crystallite size 216 nm. Less porous and homogeneous grain were obtained for sample sintered at 1100 °C/5h. It has the largest grain size 2572 nm. BaTiO3 at temperature 1100 °C/5h has the highest dielectric constant which was measured by RCL meter. The grain size, crystallite size, crystallinity, and dielectric constant increase with the increasing sintering temperature and holding time.Barium Titanate (BaTiO3) bulk was synthesized by co-precipitation method. Samples were sintered with different temperature (900°C and 1100 °C) and holding time 3 and 5 hours. The effect of temperature and holding time of sintering process on microstructure and dielectric properties of Barium titanate bulk was investigated by characterization using X-ray diffraction (XRD), Scanning Electron Microscope (SEM), Resistance Capacitance Inductance (RCL meter) and Sawyer tower method. The XRD data of BaTiO3 sintered at 1100°C/5h show the perfect single phase of perovskite structure of BaTiO3. It has highest crystallinity 21.9% and crystallite size 216 nm. Less porous and homogeneous grain were obtained for sample sintered at 1100 °C/5h. It has the largest grain size 2572 nm. BaTiO3 at temperature 1100 °C/5h has the highest dielectric constant which was measured by RCL meter. The grain size, crystallite size, crystallinity, and dielectric constant increase with the increasing sintering temperature and holding time.

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