Abstract
For tunneling magnetoresistance (TMR) devices using ferromagnetic nano particle films, the size, dispersion and number of nano particles are important factors. Relating to this, single layered Fe films (thickness: t = 0.5 – 10.0 nm) sandwiched between two MgO (2 nm thick) layers were fabricated by molecular beam epitaxy. By depositing at T s = RT (room temperature), the Fe layer had an isolated island structure for less than 1 nm thick. Correspondingly, the negative magnetoresistance effect was observed, which is characteristic of TMR. By increasing T s, the resistivity and the magnetoresistance (MR) ratio was increased. In this study, it was found that the optimal parameters for the growth of nano particle MgO/Fe/MgO based films are t = 0.5 – 1.0 nm and T s = RT − 120 °C.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
