Abstract
Iron-silicide films have been formed by metal vapor vacuum arc (Mevva) ion implantation of iron into (111) and (100) oriented silicon wafers. In the as-implanted samples with a dose of 1 × 10 17 ions/cm 2, metastable γ-FeSi 2 is the dominant phase accompanied by a small fraction of the CsCl-derived defect phase Fe 1 − x Si. The silicide grains form a surface layer on (111) silicon, whereas they are embedded in (100) silicon substrate at a depth of 30 nm. In the samples with a higher dose of 4 × 10 17 ions/cm 2, a primitive orthorhombic FeSi 2 phase is formed. Some grains with this new structure contain stacking faults which are lying on (100) planes.
Published Version
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