Abstract
This work aims to clarify the application of electron beam-induced current (EBIC) method for the morphological analysis and detection of local defects and impurities in semiconductor structures such as solar cells. One of the advantages of this method is to observe a leakage path and microplasma sites with nanometer resolution. This technique allows to precisely locate the affected area and determine the type of defect that cannot be commonly characterized with sufficient accuracy. Simultaneously, a focused ion beam could be used to determine junction by milling of the samples at the area of interest. The evaluation results of experimental measurement using these techniques on photovoltaic cells illustrates the applicability and importance of the EBIC method.
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