Abstract
ABSTRACTReal-time ellipsometry has shown to be a powerful tool to analyze thin films during processing. It is non-disturbing and its sensitivity lies in the submonolayer range. In fact, a slight variation in the film microstructure might result in a significant change of the polarization state of the reflected beam from the sample surface. SiNx layers have been grown on glass, quartz, KC1 and Si substrates by laser ablating a Si3N4 sintered target in vacuum and N2 environment. The film growth was monitored by real time ellipsometry at a fixed wavelength, and a fixed incidence angle. Once the deposition process is completed, the refractive index was obtained by perfoming in situ spectroellipsometric measurements in the 1.5 to 5 eV photon-energy range. The best curve fitting of the experimental data is used to find the film composition: a mixture of Si3N4, polycrystalline Si, and amorphous Si. The films composition and micro structure inferred from ellipsometric data are compared to those obtained by in-situ surface techniques and TEM, respectively.
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