Abstract
ABSTRACTAl-.5Cu is used as an interconnect conductor in ultra large scale integration (ULSI) devices. The specific use investigated in this study is as a gate electrode deposited directly on extremely thin 6 nm TCA SiO2. Changes in microstructure and reactions between the AI-.5Cu and SiO2 following heat treatment were characterized using analytical electron microscopy. When Al-iSi or AI-.5Cu are used as gate electrodes in a metal oxide Si field effect transistor (MOSFET) a conducting diffusion barrier layer of TiN or heavily doped poly-Si is usually deposited between the AI alloy and the SiO2. The addition of this relatively high resistivity barrier layer increases the power consumption of a MOSFET constructed with this gate electrode, increases the operating voltage necessary and decreases the frequency at which the MOSFET can be switched.1 An Al-.5Cu metal oxide silicon (MOS) device maintained a high break down voltage without a diffusion barrier following heat treatment by forming an Al-Cu intermetallic at the silica/metal interface.
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