Abstract
Microstructural characteristics of phase separated and ordered epitaxial layers of III-V compound semiconductors have been investigated by transmission electron microscopy. Phase separation is a common feature of InGaAs and InGaAsP layers grown by LPE, MBE and OMVPE and occurs at the surface during epitaxial growth. The wavelength of the fine scale structure resulting from phase separation depends on the growth temperature, growth technique and orientation of the underlying substrate. The overall morphology of the microstructure is also affected by the substrate orientation. The speckle microstructure is stable at temperatures considerably higher than the growth temperature. Also, the size of ordered domains in (Ga,Al)InP layers depends on the growth conditions.
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