Abstract
Indium phosphide (InP) films were deposited onto glass substrates using RF magnetron sputtering by varying the substrate temperature (348–573K), under constant argon pressure (0.4Pa) and RF power (150W). Substrate temperature found to have significant influence on the composition, structure, morphology, electrical and optical properties of InP films. Single phase, nearly stoichiometric and polycrystalline films exhibiting zinc blende structure with strong preferred orientation along (111), was observed for the films grown at a substrate temperature of 448K. Conical shaped grain growth was observed in the grown films. Hall measurements revealed n-type conductivity in the InP films. The optical absorption studies indicated a direct band gap of 1.35eV. Various lattice vibrational modes observed by Raman measurements were found to match well with those reported for single-crystal InP.
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