Abstract
We have grown conducting BaRuO 3 films on (100) LaAlO 3 substrate using pulsed laser deposition technique over temperature range varying from 500 to 775 °C. The films are well textured and are c-axis oriented with an in-plane epitaxial relationship of 〈010〉〈100〉BaRuO 3∥〈110〉 LaAlO 3. Atomic force microscopy observation shows that they consist of a fine arranged network of grains and have a mosaic microstructure. Surfaces with smooth terraces have been observed by Scanning Tunneling Microscopy. The resistivity of the films has been found to be a strong function of substrate temperature during film deposition. Both metallic and semiconducting behaviour has been observed in these films. Temperature-dependence resistivity measurement shows that the film has a metallic curve if it is deposited at 700 °C or lower but it transfers to a semiconducting-metallic twofold curve if the deposition temperature is increased. This unique phenomenon, which is not observed in bulk, may provide new features useful in the fabrication of novel electronic devices.
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