Abstract
Single phase of BaIrO3 powders, dense bulks, and thin films were prepared by re-calcination method, spark plasma sintering (SPS) technique, and pulsed laser deposition (PLD) technique, respectively. The phase evolutions, crystallinity, microstructure and electrical properties of samples were investigated. BaIrO3 powders obeyed normal distribution with DAV = 1.68 μm; BaIrO3 bulks were densified by SPS technique at 950–1050 °C under a pressure of 30 MPa, showing a dense microstructure and the highest relative density of about 96.8 %. The room temperature bulks resistance and carrier mobility were about 3 × 10−4 Ω m and 4 × 10−2 m2 V−1 s−1, respectively. Besides, BaIrO3 thin films with a slightly Ir deficiency were successfully prepared on Si(111) substrates at a deposition temperature of 200–400 °C by PLD technique, which was accompanied by the formation of Ir-rich composition on the surface of the laser-ablated polycrystalline BaIrO3 target. The reason for the Ir deficiency of BaIrO3 films was explained in this study.
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