Abstract
Polycrystalline GaN thin films have been deposited epitaxially on a ZnO-buffered (111)-oriented Si substrate by molecular beam epitaxy. The microstructural and compositional characteristics of the films were studied by analytical transmission electron microscopy (TEM). A SiO 2 amorphous layer about 3.5 nm in thickness between the Si/ZnO interface has been identified by means of spatially resolved electron energy loss spectroscopy. Cross-sectional and plan-view TEM investigations reveal (GaN/ZnO/SiO 2/Si) layers exhibiting definite a crystallographic relationship: [111] Si//[111] ZnO//[0001] GaN along the epitaxy direction. GaN films are polycrystalline with nanoscale grains (∼100 nm in size) grown along [0001] direction with about 20° between the (1 1 ̄ 00) planes of adjacent grains. A three-dimensional growth mode for the buffer layer and the film is proposed to explain the formation of the as-grown polycrystalline GaN films and the functionality of the buffer layer.
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