Abstract
Abstract The microstructural changes of Ga 1− x Mn x N films grown at various substrate temperatures (350–700°C) by a PEMBE system have been investigated using transmission electron microscopy. Ga 1− x Mn x N film with low dislocation density was grown epitaxially at 700°C but dislocation density increased with the decrease of substrate temperature. Moreover, HCP and FCC structures coexisted in the vicinity of interface between GaN and Ga 1− x Mn x N films grown below 450°C.
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