Abstract
The microstructure of Al-based interconnects was studied in order to explain possible causes for accelerated degradation processes like electromigration or stress-induced migration, that may result in damage and ultimate failure of microprocessor devices. TEM, EFTEM and CEBD were used to identify precipitates that were found at the bottom as well as at the top of the Al conductor lines. These precipitates can influence the reliability of metal lines by two important failure mechanisms: They increase the effective electrical resistivity of the lines, and consequently, the electrical current density will be increased that accelerates electromigration. The volume change during the precipitation formation results in mechanical stress that can cause stress-induced voiding and migration in Al lines.
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