Abstract
A new type of microstrip lateral metal-contacting micro-electromechanical systems (MEMS) series switch using an enhanced transition-design technology is proposed and demonstrated. It uses a conductor-backed coplanar waveguide (CBCPW) connected to a microstrip back-to-back MEMS transmission line without any via holes or bonded wires. The RF measurements of this switch show an off-state isolation of 18 dB and an on-state insertion loss of less than 2 dB at 6–27 GHz. In addition, the simplicity of this fabrication process is achieved using deep reactive-ion etching (DRIE), micromachining technology, and silicon-on-insulator (SOI) substrate. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 44: 93–95, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20557
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