Abstract
AbstractWe review and discuss the first fully three‐dimensional study of non‐equilibrium carrier dynamics governing semiconductor‐based intersubband optoelectronic devices like, e.g., quantum‐cascade lasers. First, a multisubband Monte Carlo simulation scheme in a kinetic Boltzmann‐like approach is presented. Then, its generalisation into a density‐matrix quantum‐transport formalism is discussed. This allows us to directly access microscopic key‐features of the electron relaxation dynamics (without resorting to phenomenological parameters) as well as to investigate the nature, coherent vs incoherent, of charge injection/transport processes. Besides providing a quantitative investigation into the operation of these devices, our kinetic analysis can indeed serve as a predictive tool for the evaluation of new designs and strategies. Applications are presented concerning quantum‐cascade devices, both state‐of‐the‐art mid‐infrared lasers as well as novel Thz emitters.
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