Microscopic model of semiconductor laser without inversion

Abstract

From a microscopic set of equations which takes into account spontaneous emission into lasing mode, we derive a macroscopic quantum model of low-threshold semiconductor lasers that includes the parabolic band structure, Pauli blocking of the injection current, and the carrier distribution dependence on the temperature. This model confirms the predictions of lasing without inversion and inversionless intensity squeezing, that were previously made by Yamamoto and co-authors on the basis of a semiclassical two-level approach. In addition, our analysis demonstrates the existence of an optimum temperature value that minimizes the injection current necessary to obtain lasing and intensity squeezing.