Microscopic identification of defects propagating through the center of silicon and indium-doped liquid encapsulated Czochralski grown GaAs using x-ray topography

Abstract

Extended defects in 3×1018 cm−3 Si-doped and 2×1019 cm−3 In-doped GaAs grown by the liquid encapsulated Czochralski technique are investigated using x-ray topography and found to include straight and helicoidal dislocations propagating along the central axis of the ingot. These dislocations are not simply extensions of dislocations in the seed. The defect morphology is explained by strong interaction with native point defects and elastic strain associated with solute segregation at the growing interface.