Abstract
Ballistic electron emission microscopy was used to study three-dimensional spreading and trapping of charge in buried, 10 nm thick SiO2 films following hot-electron injection at one location. The trapped charge was found to be distributed approximately uniformly across the thickness of the oxide, and spread laterally ∼50 nm, much more than the oxide film thickness. This large spreading can be explained by a combination of strong hot electron scattering and strong suppression in trapping efficiency at higher injected electron dose.
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