Abstract
A detailed study under forward-bias conditions of the physical origin of high frequency noise in p+(Si)-n (Si1−xGex) heterojunctions using ensemble Monte Carlo simulation is reported. Based on the internal magnitudes, we determine how the strained SiGe layer induces different features in the perpendicular transport of a heterojunction as compared with that of a silicon p+n homojunction. The main part of this study focuses on a comparative microscopic analysis of current fluctuations in homojunction and heterojunctions over a wide range of frequencies. A method based on considering a spatial analysis of noise to isolate the contributions of both types of carrier on the Si and Si1−xGex epilayers of the devices is described. The role of electrons and holes in the different regions of the devices and the combined effects of the band discontinuities and strain on noise characteristics in Si1−xGex/Si bipolar heterojunctions is discussed.
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