Abstract
Crystallographic defects are one of the main troubles for the use of SiC crystals in high power/high temperature electronics. The understanding of these defects is essential for the optimization of the crystal growth process. MicroRaman spectroscopy appears as a very promising technique for studying these defects, since it provides local (≅1 μm 2) information about crystal order, stress, polytype identification and doping, which are important aspects for the characterization of the defects. We present herein a Raman study of a few of these defects: planar inclusions, bulk inclusions and micropipes in 4H and 6H crystals, either semiinsulating and n-type. The main results are referred to the presence of inclusions of different polytypes, Si segregation at the micropipe hollow and impurity gettering effects around inclusions in n-type material.
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