Microprocessor controlled ultrahigh vacuum evaporations of critical thin films, multilayer structures, and coevaporated materials

Abstract

The use of a quadrupole mass spectrometer as a rate monitor is described for a fast and accurate deposition control down to very low evaporation rates in an ultrahigh vacuum plant. In several applications of this concept, a rate control down to 0.1 A/s in single‐source and coevaporation experiments could be documented for different materials and material combinations. The feasibility of operation at oxygen gas pressures of up to 4.5×10−5 mbar is shown for yttrium/copper coevaporations. Multilayer structures were deposited under microprocessor control with the same rate control method used.