Abstract
Vertically aligned conducting ultrananocrystalline diamond (UNCD) nanorods are fabricated using the reactive ion etching method incorporated with nanodiamond particles as mask. High electrical conductivity of 275 Ω·cm−1 is obtained for UNCD nanorods. The microplasma cavities using UNCD nanorods as cathode show enhanced plasma illumination characteristics of low threshold field of 0.21 V/μm with plasma current density of 7.06 mA/cm2 at an applied field of 0.35 V/μm. Such superior electrical properties of UNCD nanorods with high aspect ratio potentially make a significant impact on the diamond-based microplasma display technology.
Highlights
Microplasma science and technology is an intersection of plasma science, photonics, and materials science, which offers a realm of plasma phenomenology and device functionality [1,2,3,4]
We report the fabrication of vertically aligned ultrananocrystalline diamond (UNCD) nanorods from n-type UNCD films by reactive ion etching (RIE) using nanodiamond (ND) particles as a hard etching mask
Aligned N2-UNCD nanorods are fabricated by subjecting the N2-UNCD films to the RIE process
Summary
Microplasma science and technology is an intersection of plasma science, photonics, and materials science, which offers a realm of plasma phenomenology and device functionality [1,2,3,4] Such plasma-based devices exhibit great potential for a broad spectrum of applications in microdisplays, on-chip frequency standards, materials synthesis, elemental analysis, and detectors of environmentally hazardous or toxic gases or vapors [5,6,7,8,9,10,11] But due to the insufficient luminous efficiency of the plasma devices [12], development of a cathode material with efficient emission of secondary electrons for improving the initiation efficiency of plasma illumination is called for. It is still of great interest to formulate a low-cost, flexible, and relevant method to fabricate diamond nanostructures with high areal density and high uniformity in a desired geometry
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