Abstract

Microphotoluminescence spectroscopy and imaging were used to study impurities and defects in CdTe crystals grown by nonequilibrium techniques. The growth procedure includes low-temperature synthesis and purification of the material via congruent sublimation, with subsequent deposition under the conditions of gas-dynamic vapor flow and high-rate low-temperature condensation. Although the growth conditions are highly nonequilibrium, the obtained polycrystalline material with a grain size of 1–2 mm exhibits strong low-temperature exciton luminescence, whose intensity is nearly uniform over the bulk of the ingots. At the same time, it is found that residual impurities and defects have a tendency to accumulate to form clusters within certain areas which are a hundred micrometers in size; the density of some impurities in these clusters is sufficiently high.

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