Abstract
We present preparation and electrical characterization of Polyaniline (PANi) SU8 micropatternable photoresist blend for MEMS applications. The blend was prepared by shear mixing of PANi and SU8-2010 at an rpm of 1000 for 15 hours. The composite was spin coated on a silicon wafer at an 850 rpm in order to achieve a thickness of 50µm, followed by soft baking at 70 {degree sign}C for 35 minutes and cooling to room temperature. The desired structures were patterned using masked UV exposure for 60 seconds. Full cross linking of PANi SU-8 blend was achieved by a post-exposure bake at a temperature of 90{degree sign}C for 25 minutes followed by cooling to room temperature. The desired electrode structures and trace lines were then developed in SU-8 developer (Microchem{trade mark}) for 10 minutes by manual agitation. The fabricated structures were analyzed under SEM and Electron Dispersion X-ray Spectroscopy (EDS) demonstrating that an electrically conductive path is formed by PANI in SU-8 polymer matrix. It was also observed that resistivity of 4×103 Ω-m is achieved at 8.6 weight percentage of PANi in SU-8 polymer matrix.
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