Micron channel length ZnO thin film transistors using bilayer electrodes

Abstract

Micro light-emitting diodes (Micro-LEDs) are currently attracting more and more attention. Thin film transistors (TFTs) with micron channel lengths can be used to drive Micro-LEDs. The key parameters of TFTs, such as mobility, ION/IOFF and threshold voltage, still need to be improved. In this study, we propose and experimentally demonstrate ZnO TFTs using bilayer electrodes to overcome the short channel effects when the channel length is scaled down to 3 μm. Ti, Mo and Sn interlayers not only serve as diffusion barriers to prohibit migration of Cu atoms from the top electrodes, but also enhance adhesive energy of the metal electrodes on ZnO channel layers. ZnO TFTs using Cu/Ti bilayer electrodes exhibit the best performance, e.g., a high mobility of 45.3 cm2V-1s−1, a high ION/IOFF ratio of 4.28 × 109, a low subthreshold of 0.24 V/dec and a proper threshold voltage of 1.13 V. The high mobility can be attributed to a significant decrease of the barrier height and a slight narrowing of the space charge layer, and the high ratio of ION/IOFF is concerned with the high electron concentration under an ON-state condition. Thus, ZnO TFTs using Cu/Ti bilayer electrodes can be used in next-generation displays.