Abstract
An overview of applications of the theory of defects (dislocations, disclinations, and interfaces) to nanostructured materials is presented. The consideration is restricted by the framework of the continuum approach. First, the defect content of interfaces: grain and phase boundaries is discussed. For grain boundaries a specific nonequilibrium state is analysed. Together with defects generated at grain junctions this state is responsible for strong elastic distortions in nanograin interior. For phase boundaries the transition between coherent and incoherent, states of the interface is considered. Individual defects behaviour in nanostructured materials is investigated from a viewpoint of their interaction with different kinds of interfaces. The critical behaviour of dislocations in small particles and nanograins is considered. The role of disclinations in the formation of nanoparticles with pentagonal symmetry is analysed. The properties of dislocations in layered nanostructures are considered. In particular, for heteroepitaxial thin films two problems of technological importance are discussed: (1) prediction of mechanisms of lattice mismatch accommodation and (2) reduction of threading dislocation density.
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