Abstract

This paper describes the design, modeling, and experimental test results of a single crystal silicon micromechanical device developed to evaluate fracture and fatigue of silicon based micromechanical devices. The structure is a cantilever beam, 300 microns long, with a large silicon plate and gold inertial mass at the free end. Torquing and sensing electrodes extend over the plate, and with associated electronics, drive the structure at resonance. Fatigue crack propagation is measured by detecting the shift in the natural frequency caused by the extension of a preexisting crack introduced near the fixed end of the cantilever. Experimental data are presented demonstrating time-dependent crack growth in silicon. Crack extensions of 10 to 300 nm have been measured with a resolution of approximately 2.5 nm, and crack tip velocities as low as 2.1×10−14 m/s. It is postulated that static fatigue of the native surface silica layer is the mechanism for crack growth. The methodology established here is generic in concept, permitting sensitive measurement of crack growth in larger fatigue specimens as well.

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