Abstract
A micromachined specimen with a test section only 150-μm thick was developed for investigating subcritical crack growth in silicon. Crack growth rates in the range 10−4–10−10m/s were measured as a function of applied stress intensity (v–Kcurves) during tests in humid air and dry nitrogen lasting up to 24 h. The fracture toughness,KIcof {110} silicon was also measured at 1.15 ± 0.08 MPa m1/2. While some evidence MPa-m1/2of subcritical crack growth appeared to occur in the region 0.9KIc<K> 0.98KIc, the extremely high crack growth exponent (n100) and the high ratio of the apparent stress corrosion threshold,KIscc, to the fracture toughness,KIscc/KIc> 0.9, suggests that no clear evidence exists for a stress corrosion process in silicon exposed to humid air.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
