Abstract

We report on GaSb-based quantum-well diode lasers in a micro-machined external cavity setup using the Littrow configuration. An electrostatically-actuated silicon- grating, optimized to achieve a wide tuning range in the 2.3 mum wavelength range, is used as tuning element. A tuning range of 82 nm could be realized. The maximum output power of the micro external cavity laser (muECL) was above 15 mW over the entire tuning range.

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